Dr Nart Daghestani

Nart Daghestani has completed his PhD at the University of Dundee.

His main research interests cover the areas of THz technology and photonics.

Nart's research has involved generating THz from novel materials such as quantum based photoconductive materials, and nanocrystalline silicon.

His research also involves optical pump methods for THz systems.

Recent Publications/Publications in Peer-Reviewed Journals:

• Terahertz emission from InAs/GaAs quantum dot based photoconductive devices.  N. S. Daghestani, M. A. Cataluna, G. Berry, G. Ross, and M. J. Rose. Applied Physics Letters, vol. 98, pp. 181107-3, 2011.     This paper is also featured on: Virtual Journal of Nanoscale Science & Technology
• THz generation from a nanocrystalline silicon-based photoconductive device.  N. S. Daghestani, S. Persheyev, M. A. Cataluna, G. Ross, and M. J. Rose. IOP-Semiconductor Science and Technology, vol. 26, p. 075015, 2011.
• Compact Dual-Wavelength InAs/GaAs Quantum-Dot External-Cavity Laser Stabilized by a Single Volume Bragg Grating.  N. S. Daghestani, M. A. Cataluna, G. Ross, and M. J. Rose.  Photonics Technology Letters, IEEE, vol. 23, pp. 176-178, 2011.
• Ultrafast release and capture of carriers in InGaAs/GaAs quantum dots observed by time-resolved terahertz spectroscopy.  H. P. Porte, P. U. Jepsen, N. Daghestani, E. U. Rafailov, and D. Turchinovich, Applied Physics Letters, vol. 94, pp. 262104-3, 2009.
• Efficient THz radiation from a nanocrystalline silicon-based multi-layer photomixer.  N. S. Daghestani, G. S. Sokolovskii, N. E. Bazieva, A. V. Tolmatchev, and E. U. Rafailov.  IOP-Semiconductor Science and Technology, vol. 24, p. 095025, 2009.
• Stable dual-wavelength operation of InGaAs diode lasers with volume Bragg gratings.  S. A. Zolotovskaya, N. Daghestani, G. B. Venus, L. B. Glebov, V. I. Smirnov, and E. U. Rafailov. Applied Physics Letters, vol. 91, 171113, Oct 2007.

Contributions to Peer-reviewed Conferences:

• Nanocrystalline Si based photoconductive device for THz generation  N.S. Daghestani, S. Persheyev, M. A. Cataluna, G. Ross, and M. J. Rose. International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24), 21-26 August 2011, Nara, Japan.
• InAs/GaAs Quantum Dots for THz generation.  N.S. Daghestani, M. A. Cataluna, G. Berry, G. Ross, and M. J. Rose.  Compound Semiconductor Week 2011. 22-26 May 2011.  P3.32. Berlin, Germany.
• Observation of Trapping and Release of Carriers in InGaAs/GaAs Quantum Dots by Ultrafast THz Spectroscopy  H.P.Porte, P.Uhd Jepsen, N Daghestani, K.G.Wilcox, E.U.Rafailov, and D.Turchinovich.  LEOS 09, Belek-Antalya 4-8 October 2009
• Capture and release of carriers in InGaAs/GaAs quantum dots H.P.Porte, P.Uhd Jepsen, N Daghestani, K.G.Wilcox, E.U.Rafailov, and D.Turchinovich.  EDISON 16, Montpellier 24-28 August 2009
• Efficient THz radiation from nanocrystalline silicon-based multilayer photomixer  N Daghestani, G. S. Sokolovskii, A.V. Tolmatchev, N.E. Bazieva, W. Sibbett and E.U. Rafailov,
  OSA-ASSP 2008 Topical meeting,WB34 WED 30 Jan 2008, Nara, Japan.
• Stable Dual-Wavelength Operation of InGaAs Diode Lasers with Volume Bragg Gratings  S.A. Zolotovskaya, N.S. Daghestani, G.B. Venus, V.I Smirnov, L.B. Glebov, E.U. Rafailov.
  CLEO/Europe 07, Munich, Germany, CB12-6-THU, 2007.
• High power dual-mode output from InGaAs laser with a single volume Bragg grating  S.A. Zolotovskaya, N.S.Daghestani, G.B. Venus, V.I Smirnov, L.B. Glebov, E.U. Rafailov.
  3rd EPS-QEOD Europhoton Conference31th August -5th September 2008, Paris, France

 Authorship in Patents:

• Multilayered Photoconductive Device - US Patent 7, 847,254.
• Methods and Apparatus for Automated Product Identification in Point of Sale Applications - US Patent application number 12/338291, Publication number 2010/0155476 A1
• Novel Terahertz Sources - UK Patent Pending, application number GB1102774.5

Divison of Electronic Engineering & Physics

School of Engineering, Physics and Mathematics

Fulton Building

University of Dundee

Dundee

DD1 4HN